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| SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features * Extremely Low Parasitic Capitance and Inductance * Surface Mountable in Microwave Circuits, No Wirebonds Required * Rugged HMIC Construction with Polyimide Scratch Protection * Reliable, Multilayer Metalization with a Diffusion * Barrier, 100% Stabilization Bake (300C, 16 hours) * Lower Susceptibility to ESD Damage MA4E2508 Series V2 The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder. Case Style 1112 A Description and Applications The MA4E2508 SurMountTM Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300C. The " 0502 " outline allows for Surface Mount placement and multi- functional polarity orientations. B C D E D Inches Dim A B C D Sq. E Min. 0.0445 0.0169 0.0040 0.0128 0.0128 Max. 0.0465 0.0189 0.0080 0.0148 0.0148 Millimeters Min. 1.130 0.430 0.102 0.325 0.325 Max. 1.180 0.480 0.203 0.375 0.375 Equivalent Circuit 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Electrical Specifications @ 25 C Model Number MA4E2508L Type Recommended Frequency Range DC - 18 GHz Vf @ 1 mA ( mV ) 330 Max 300 Typ 470 Max 420 Typ 700 Max 650 Typ Ct @ 0 V ( pF ) 0.24 Max 0.18 Typ 0.24 Max 0.18 Typ 0.24 Max 0.18 Typ MA4E2508 Series V2 Low Barrier Medium Barrier High Barrier Rt Slope Resistance ( Vf1 - Vf2 ) / (10.5mA-9.5mA ) () 16 Typ 20 Max 12 Typ 18 Max 6 Typ 8 Max MA4E2508M MA4E2508H DC - 18 GHz DC - 18 GHz Rt is the dynamic slope resistance where Rt = Rs + Rj , where Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic Resistance. Max Forward Voltage Difference Vf @ 1 mA: 10 mV Die Bonding Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. The rugged construction of these SurMount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The devices are well suited for higher temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37/Ag2 solders are acceptable for usage. For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying Equal heat to the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed. Absolute Maximum Ratings @ 25 C (Unless Otherwise Noted) 1 Parameter Operating Temperature Storage Temperature Junction Temperature Forward Current Reverse Voltage RF C.W. Incident Power RF & DC Dissipated Power Absolute Maximum -40 C to +125 C -40 C to +150 C +175 C 20 mA 5V + 20 dBm 50 mW 1. Operation of this device above any one of these parameters may cause permanent damage. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair MA4E2508L Low Barrier SPICE PARAMETERS (Per Diode)* Is (nA) 26 Rs () 12.8 N 1.20 Cj0 ( pF ) 1.0 E-2 M 0.5 Ik (mA) 14 Cpar (pF) 9.0 E-2 Vj (V) 8.0 E-2 0.5 FC MA4E2508 Series V2 BV (V) 5.0 IBV (mA) 1.0 E-2 MA4E2508M Medium Barrier SPICE PARAMETERS (Per Diode)* Is (nA) 5 E-1 Rs () 9.6 1.20 N Cj0 ( pF ) 1.0 E-02 M 0.5 Ik (mA) 10 Cpar (pF) 9.0 E-2 Vj (V) 8.0 E-2 0.5 FC BV (V) 5.0 IBV (mA) 1.0 E-2 MA4E2508H Medium Barrier SPICE PARAMETERS (Per Diode)* Is (nA) 5.7 E-2 Rs () 6.5 N 1.20 Cj0 ( pF ) 1.0 E-02 M 0.5 Ik (mA) 4 Cpar (pF) 9.0 E-2 Vj (V) 8.0 E-2 0.5 FC BV (V) 5.0 IBV (mA) 1.0 E-2 * Spice parameters ( PER DIODE ) are based on the MA4E2502 SERIES datasheet. Circuit Mounting Dimensions (Inches) Ordering Information Part Number Package Wafer on Frame Die in Carrier Tape/Reel Wafer on Frame Die in Carrier Tape/Reel Wafer on Frame Die in Carrier Tape/Reel 0.020 0.020 MA4E2508L-1112W MA4E2508L-1112 0.020 0.020 MA4E2508L-1112T MA4E2508M-1112W MA4E2508M-1112 0.013 MA4E2508M-1112T MA4E2508H-1112W MA4E2508H-1112 MA4E2508H-1112T 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair MA4E2508 Schematic Per Diode Ct MA4E2508 Series V2 Ls Rs Rj Schematic Values per Diode Model Number MA4E2508L MA4E2508M MA4E2508H Ls (nH) 0.8 0.8 0.8 Rs ( ) 12.8 9.6 6.5 Rj ( ) 26 / Idc 26 / Idc 26 / Idc Ct ( pF ) 0.09 0.09 0.09 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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